Charge distributions in fast switching rectifiers are measured by free-carrier infrared absorption in both steady state and during transient operation. The results are compared to curves generated by an exact simulation of the carrier-flow equations and it is determined that the carrier lifetime varies inversely as the 0.3 power of the doping. A study is also made on the effect that gold doping, platinum doping, and electron irradiation have on the carrier distributions under both steady-state and open-circuit decay conditions. These results are analyzed in view of measurements of the switching behavior in these devices made at the device terminals.
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Houston et al. (1980) studied this question.