Current-voltage characteristics for Be ion implanted InSb p+n junctions with insulated gate fabricated by planar technology are studied. It has been demonstrated by field effects of the insulated gate that a large current can be originated from the surface of the p+ region. Results also suggest that the insulated gate is a good way to improve properties of the p+n junction and a low dose of 4.1×1012 cm-2 at 90 keV is enough for preparation of a good p+n junction.
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Fujisada et al. (1984) studied this question.
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