High field transport in semiconductors. The drifted maxwellian approach. II. Application to n‐Insb

The drifted Maxwellian approach to the transport properties of semiconductors is applied to Insb at high and low fields assuming Kane's model. Polar optical, acoustic, and ionised impurity scattering mechanisms are considered with band structure non‐parabolicity and the mixing of Bloch states with spin‐reversal effects being taken into account. The inclusion of the mixing of Bloch states leads to an increase of 17% in the low‐field mobility of Insb at 77 °K. Consistency between theory and experiment is obtained by taking Sanderson's static dielectric constant of 17.50, and Ehrenreich's acoustic deformation potential of −7.2 eV. A deformation potential of −30 eV seems inappropriate.