Ion implantation and rapid thermal annealing of Mg, Cd, and Si in AlxGa1−xAs grown by molecular-beam epitaxy

Ion implantation and rapid thermal annealing of Mg, Cd, and Si in AlxGa1−xAs are reported. The dependence of activation on various Al compositions (x=0.15–0.35) and annealing temperatures was investigated. Activations of over 60% were achieved for both Mg and Cd. However, for the same annealing cycle, the activation efficiency of the Mg implants was found to be generally higher than that of Cd implants. No particular dependence of the activation efficiency on Al composition was observed for either ion. For Si29 implants, poor activation was observed in samples with x above 0.2, while for x=0.2 a maximum activation of 80% was achieved with a 1000 °C, 5 s annealing cycle.