We report on a substrate-side-illuminated GaAs Schottky photodiode fabricated on a glass substrate using the epitaxial lift-off technique. An external quantum efficiency in excess of 70% was observed at a wavelength of 780 nm. This is approximately 1.6 times higher than that of a conventional photodiode which has an absorption layer of the same thickness and is illuminated through a semitransparent Schottky window.
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Kobayashi et al. (1992) studied this question.
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