Thermally‐stimulated excitation of electrons from deep traps of insulators in electric fields

An analytic expression for the probability of thermal activation of electrons trapped in deep defect states of an insulator is derived taking explicitly into account an electric field and lattice vibrations. From the activation probability a detrapping current intensity is calculated, which is in good agreement with corresponding experimental results obtained, for example, by means of the thermally stimulated electron emission (TSEE). In this way, for the TSEE effect a possible microscopic explanation is found for the first time.