We report that common gases (such as He, Ar, H₂, O₂, N₂, CO) experience adsorption at oxidized silicon surfaces at 300 K via electrostatic coupling. This is deduced using contact potential measurements of the work function for gas pressure in the range 10^-3<P<10²Torr. The adsorption can be enhanced through surface charging via internal photoemission of electrons leading to mutual electron-gas transient trapping. A simple electrostatic model based on monopole-dipole coupling results in an isotherm in agreement with the data.
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Shamir et al. (1999) studied this question.
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