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Multilayers of Bi2Se3/ZnSe with the periodicity of a few nanometers were grown by molecular-beam epitaxy on Si(111). While epitaxial growth of Bi2Se3 on ZnSe proceeded by two-dimensional nucleation, ZnSe growth on Bi2Se3 showed the three-dimensional growth front. Therefore, the two complementary interfaces of Bi2Se3/ZnSe were asymmetric in morphological properties. Strain-relaxation rates were found to differ between epitaxial ZnSe and Bi2Se3, which could be attributed to the specific growth modes and the properties of Bi2Se3 and ZnSe surfaces.
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Li et al. (2011) studied this question.
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