Highly uniform characteristic 12-element monolithic AlGaInAs/InP 1.5 µm strain-compensated multiquantum well ridge laser arrays with low threshold current and high characteristic temperature have been achieved. The array element exhibits a threshold current of 5.4 mA and a characteristic temperature of 90 K. Excellent uniformity, with standard deviations of 0.14 mA, 0.007 W/A, and 1.13 nm for threshold current, slope efficiency and lasing wavelength, respectively, were obtained.
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Lin et al. (1998) studied this question.
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