Nanoscale non-volatile CBRAM-cells are developed by using a CuO solid-electrolyte, providing a ∼10 2 memory margin, ∼3 × 10 6 endurance cycles, ∼6.63-years retention time at 85 °C, ∼100 ns writing speed, and MLC operation.
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Kwon et al. (2015) studied this question.
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