N-type GaAs/Ga0.4Al0.6As heterostructures have been grown on semi-insulating GaAs substrates using metal-organic chemical vapour deposition. The GaAs layers were mounted on insulator supports and the substrates and Ga0.4Al0.6As removed using a preferential etching procedure. The preparation and electrical properties of submicrometre thick insulator-supported n-type GaAs layers are described.
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Griffiths et al. (1979) studied this question.
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