The Schottky barrier energies for both n-type and p-type materials have been measured for the wide band-gap alloys InGaP and InGaAlP when lattice matched to GaAs. A gold metallization was used and the barrier energy was measured on chemically etched surfaces using conventional current-voltage and photoemission techniques. In the range of alloy composition investigated, the sum of the n-type and p-type barriers was found not to equal the value of the energy gap determined from optical measurements. For InxGa1−x−yAlyP lattice matched to GaAs, the n-type Schottky barrier energy was found to decrease, while the p-type barrier increased, with increasing Al content y.
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Nanda et al. (1992) studied this question.
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