The solvothermal/hydrothermal method is an important technology for producing semiconductor nanowires at low temperature. This paper presents an integrated discussion of nanowire growth, mainly from four aspects in the solvothermal/hydrothermal process. These aspects, including materials with highly anisotropic crystal structures, coordination directing/mixed solvents, surfactants/capping reagents, and reaction at relatively high temperature, have a key effect on nanowire formation in the solvothermal/hydrothermal process. These factors have instructional significance for nanowire synthesis and research of their growth process in the future.
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Zou et al. (2006) studied this question.
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