A multilevel dynamic random-access memory using a single-electron box (SEB) and single-electron transistor (SET) is fabricated on a silicon-on-insulator substrate. A one-dimensional field-effect transistor (FET), which is connected to the SEB, modulates a barrier potential to precisely control the number of electrons one by one in the SEB by means of the Coulomb-blockade phenomenon. At room temperature and 26K, we demonstrate a multilevel memory, in which each interval between the levels is given by a single electron, by using the SET electrometer coupled capacitively to the SEB. The control of stored electrons by the FET assures long-retention time and high-speed write/erase operation.
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Nishiguchi et al. (2004) studied this question.
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