Band offset determination in the strained-layer InSb/AlxIn1−xSb system

This is the authors' abstract. We don't add key points for this paper.

We use interband exciton transitions in parabolically graded quantum wells to measure the band offset at the InSb/AlxIn1−xSb interface. The method we use is based on similar studies in the GaAs/AlxGa1−xAs system but modified to reflect the strong nonparabolicity and strain of the InSb/AlxIn1−xSb system. We find a conduction band offset ratio of 0.62±0.04 for Al concentrations in the range 2%–12%. The observed lack of variation of the offset with Al concentration suggests a lack of strain dependence in the InSb/AlxIn1−xSb system for practical Al concentrations.