A chip-level integrated optoelectronic modulation circuit is described for high-speed digital interconnects. This circuit is composed of an electroabsorption modulator with surface-normal operation at 1550-nm wavelengths and a high-speed electronic driver. A growth/etch/regrowth procedure is used to fabricate the multiple-quantum well modulators and the heterojunction bipolar transistors (HBTs) of the circuit on a common InP substrate. The measured bandwidth is approximately 30 GHz.
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Yap et al. (2001) studied this question.
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