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Intersubband optical absorption in a {δ}-doped semiconductor with an applied electric field is investigated theoretically with the intrasubband relaxations taken into account. Exact solutions of the Schr\"odinger equation for the ideal ssV-shaped potential well with the applied electric field are obtained analytically. It is predicted that wide range tuning of the intersubband absorption would be possible for a {δ}-doped semiconductor layer by controlling the amount of the planar doping. Calculated intersubband absorption spectra in a {δ}-doped semiconductor show redshifts with an applied electric field in contrast with intersubband electroabsorption in an ordinary quantum well, which shows blueshifts.
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Doyeol Ahn (1993) studied this question.
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