Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
June 1, 2001Journal of Applied Physics

Quantum calculations of conduction properties of metal/InAlAs/InGaAs heterostructures

View Full Paper
Ask AI
Bookmark
Share

Authors

FPFlorence PodevinInstitut polytechnique de GrenobleOVO. VanbésienCentre National de la Recherche ScientifiqueDLD. LippensInstitut d'électronique de microélectronique et de nanotechnologie

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Podevin et al. (2001) studied this question.

synapsesocial.com/papers/6a8d1262c9fcfbd7f79067d6https://doi.org/10.1063/1.1359756
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Step-like heterostructure barrier varactor1998 · 18 citations
  2. 2Effect of cathode spacer layer on the current-voltage characteristics of resonant tunneling diodes1990 · 39 citations
  3. 3DC and large-signal time-dependent electron transport in heterostructure devices: an investigation of the heterostructure barrier varactor1995 · 10 citations
  4. 4MOVPE-grown millimeter-wave InGaAs mixer diode technology and characteristics1997 · 25 citations
  5. 5InGaAs-Schottky contacts made by in situ plated and evaporated Pt-an analysis based on DC and noise characteristics1998 · 12 citations