High Electron Mobility Metal–Insulator–Semiconductor Field-Effect Transistors Fabricated on (111)-Oriented InGaAs Channels

Metal–insulator–semiconductor field-effect transistors (MISFETs) were fabricated on the (111)A surface of In 0.53 Ga 0.47 As for the first time. Al 2 O 3 gate dielectrics were formed by atomic layer deposition on sulfur-stabilized InGaAs surfaces. The MISFET on (111)A demonstrated channel mobility higher than that on (100), achieving more than 100% improvement with respect to Si even at a high surface carrier concentration.