Large electric-field induced electron drift velocity observed in an InxGa1−xAs-based p–i–n semiconductor nanostructure at T=300 K

Transient subpicosecond Raman spectroscopy has been used to measure electron transport properties in an InxGa1−xAs-based semiconductor nanostructure under the application of an electric field. The deduced electron drift velocity has been found to be significantly larger than either GaAs or InP-based p–i–n nanostructures under similar experimental conditions. We attribute this finding to both the smaller electron effective mass and the larger Γ to L (X) energy separations in InxGa1−xAs. The experimental results are compared with ensemble Monte Carlo calculations.