⌘+K

Pulse Explore Communities Researchers Journals

Home Communities Explore

May 1, 1996Journal of Applied PhysicsOpen Access

Ion-beam synthesis of amorphous SiC films: Structural analysis and recrystallization

C. Serre L. Calvo‐Barrio A. Pérez-Rodrı́guez A. Romano‐Rodrı́guez J.R. Morante Y. Pacaud R. Kögler V. Heera W. Skorupa

View Full Paper

Ask AI

Bookmark

Share

Abstract

The analysis of SiC films obtained by carbon ion implantation into amorphous Si (preamorphized by Ge ion implantation) has been performed by infrared and Raman scattering spectroscopies, transmission electron microscopy, Rutherford backscattering, and x-ray photoelectron spectroscopy (XPS). The data obtained show the formation of an amorphous Si1−xCx layer on top of the amorphous Si one by successive Ge and C implantations. The fitting of the XPS spectra indicates the presence of about 70% of Si–C bonds in addition to the Si–Si and C–C ones in the implanted region, with a composition in the range 0.35

Discussion

No takes yet. Share an insight, caveat, or question.

Cite This Study

Serre et al. (1996) studied this question.

synapsesocial.com/papers/6a8d170eb27309dd08099eb7 https://doi.org/10.1063/1.361514

View Full Paper

Ask AI

Bookmark

Share

Keep reading

Synapse has enriched 5 related papers. Consider them for comparative context:

1Coherent direction-dependent valley transport in Dirac/Weyl semimetalsJournal of Applied Physics · Fri,
2Strong intervalley mixing between copropagating quantum Hall edge channels in a silicon MOSFETJournal of Applied Physics · Thu,
3Coherent migration of the single excitation injected into finite-length segment of the biomolecular chainJournal of Applied Physics · Wed,
4Atomistic investigation of structural phase transformation in single-crystal aluminum under double-shock compression and releaseJournal of Applied Physics · Wed,
5Molecular dynamics simulations for Debye-temperature extraction in compressed metalsJournal of Applied Physics · Wed,

More from Journal of Applied Physics

Landau–Floquet modulation of ballistic thermionic emission in a driven electron gasWed,
GaN planar Gunn diodes with high–low sheet density distribution of 2DEG for terahertz applicationWed,
Comprehensive variable-temperature Raman and spectroscopic ellipsometry investigation of bulk undoped, Fe-doped, and Ge-doped GaN: Correlated phonon, carrier, optical, and disorder dynamicsWed,
On the impact of sample preparation on scanning spreading resistance microscopyWed,
Helium-ion beam pattern imaging using irradiation-induced VB− centers in h-BN composite filmsThu,