Fabrication and properties of polycrystalline-SiC/Si structures for Si heterojunction devices

Polycrystalline-SiC/Si heterojunctions are fabricated by growing n-type polycrystalline SiC films on p-type Si substrates using a low-temperature chemical vapor deposition technique. The heterojunctions show rectification with low leakage currents. The typical value of the ideality factor is 1.2. This study indicates that polycrystalline SiC is a promising material for fabricating Si heterojunction devices.