The Pt/Si(001) surface has been investigated by use of low-energy electron diffraction (LEED), Auger-electron spectroscopy, and electron-energy-loss spectroscopy for various Pt coverages and annealing temperatures. A surface phase diagram is formed for Pt coverages less than one monolayer (ML) and annealing temperatures of 20--1100 ^∘{}C. A mixed LEED pattern of Pt/Si(001) c(4×{}2) and Pt/Si(001) c(4×{}6) of a reconstructed phase has been found at approximately 1/6 to 1/3 ML and annealing temperatures of 550--1050 ^∘{}C. The surface structure of the reconstructed phase has been analyzed by scanning tunneling microscopy and it is found that the c(4×{}2) reconstruction is formed by the regular arrangement of Pt atoms embedded in fourfold hollow sites surrounded by two dimers and the c(4×{}6) reconstruction is formed by long-range ordering of missing dimer defects superimposed on the c(4×{}2) reconstruction.
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Itoh et al. (1992) studied this question.
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