Continuous-wave operation near 1.3 μm or a diode laser based on self-organized quantum dots (QD's) on a GaAs substrate is demonstrated. Multiple stacking of InAs QD planes covered by thin InGaAs layers allows us to prevent gain saturation and achieve long-wavelength lasing with low threshold current density (90-105 A/cm2) and high output power (2.7 W) at 17/spl deg/C heatsink temperature. It is thus confirmed that QD lasers of this kind are potential candidates to substitute InP-based lasers in optical fiber systems.
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Zhukov et al. (1999) studied this question.
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