Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
January 16, 1989Applied Physics Letters

Growth and characterization of (111) oriented GaInAs/GaAs strained-layer superlattices

View Full Paper
Ask AI
Bookmark
Share

Authors

JBJ. G. BeeryLos Alamos National LaboratoryBLB. LaurichUniversity of StuttgartCMC.J. MaggioreCalifornia State University System

Discussion

Loading...

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Beery et al. (1989) studied this question.

synapsesocial.com/papers/6a8d209be4447a32cadcd2cbhttps://doi.org/10.1063/1.101016
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 3 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Growth of GaAs, AlGaAs, and InGaAs on (111)B GaAs by molecular-beam epitaxy1988 · 32 citations
  2. 2Theoretical calculations of heterojunction discontinuities in the Si/Ge system1986 · 1,384 citations
  3. 3Electromodulation of the electronic structure and optical properties of [111]-growth-axis superlattices1988 · 34 citations