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We have fabricated 15.4% and 12.4% efficient thin-film CuIn1−xGaxSe2 (CIGS)-based photovoltaic devices from solution-based electrodeposited (ED) and electroless-deposited (EL) precursors. As-deposited precursors are Cu-rich CIGS. Additional In, Ga, and Se are added to the ED and EL precursor films by physical vapor deposition (PVD) to adjust the final semiconductor film composition to CuIn1−xGaxSe2. The ED and EL device parameters are compared with those of a 17.7% PVD device. The tools used for comparison are current voltage, capacitance voltage, and spectral response characteristics.
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Bhattacharya et al. (1999) studied this question.
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