Resistivity Studies of Single-Crystal and Polycrystal Films of Aluminum

The resistivities of condensed polycrystal and single-crystal aluminum films have been measured as a function of thickness (1600-36000 {}) and temperature (4.2-300^∘{}K). Both the temperature-independent residual resistivity and the temperature-dependent resistivity increase with decreasing film thickness. The residual resistivity agrees very well with the Fuchs-Sondheimer theory. Both groups of films have the same bulk electron mean free path but different reflection parameters. The increase in the temperature-dependent part of the resistivity is larger but similar to the deviations predicted by the Fuchs-Sondheimer theory.