To review the surface chemical structures, fabrication techniques, and operational mechanisms of oxidized silicon-terminated (C–Si–O) diamond field-effect transistors.
Evaluated two primary channel fabrication routes: silicon dioxide (SiO2) annealing under reducing atmospheres and high-temperature silicon molecular beam deposition (MBD).
Analyzed structural and electrical characterization data across various diamond crystal orientations and device architectures.
C–Si–O diamond channels yielded normally-off p-channel transistors with threshold voltages spanning −3 to −16 V and hole mobilities from 100 to 200 cm²/V·s.
A (111)-oriented C–Si–O MOSFET achieved an output current density of −311 mA/mm at a threshold voltage of −5.6 V.
MBD-fabricated C–Si–O MOSFETs demonstrated high electrical stability with threshold voltage shifts under 0.2 V across varying source-to-drain distances.