Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation P. Bousoulas, I. Michelakaki, D. Tsoukalas; Influence of oxygen content of room temperature TiO2−x deposited films for enhanced resistive switching memory performance. J. Appl. Phys. 21 January 2014; 115 (3): 034516. https://doi.org/10.1063/1.4862797 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAIP Publishing PortfolioJournal of Applied Physics Search Advanced Search |Citation Search
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Bousoulas et al. (2014) studied this question.
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