The diffusion of phosphorus implanted at low dose into crystalline silicon has been investigated as a function of dose and furnace anneal time. A major feature is an initial transient diffusion enhancement, comparable with the well-known transient in boron diffusion. The transient is larger than expected from published studies using rapid thermal annealing.
No takes yet. Share an insight, caveat, or question.
Cowern et al. (1986) studied this question.
Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context: