Generation of SiOC films by the Thermal Induction

Hybrid type SiOC films have a blue and red shift according to the flow rate ratio and RF power by CVD. The reason of the chemical shift is due to the particular C–H bond effect such as condensation or elongation. It is generally known that a blue and red shift are clearly defined notwithstanding the small difference flow rate ratio. The physical properties due to the chemical shifts are also very difference, respectively. The flow rate ratio O2/BTMSM = 1.0 for SiOC films refers to the boundary changed from the blue shift to the red shift. This study deals with the generation of peculiar Si–O–C bond in as-deposited film and the C–O bond in annealed films with the flow rate ratio O2/BTMSM = 1.0 using the analysis of the X-ray photoelectron spectroscopy and Fourier transform infrared spectra. It is discussed the change of the bonding structure due to the nucleophilic and oxidation reaction by thermal induction.