Dependence of radiation-induced interface traps on gate electrode material in metal/SiO2/Si devices

The density of radiation-induced interface traps in a metal-oxide-semiconductor (MOS) device has been found to depend on the electrode material used to form the gate. For a given oxide process, this dependence correlates well with the gate-induced interfacial stress distribution in the MOS system. The gate-induced bond strain gradient model that we proposed previously may be readily used to explain the results.