Transparent Conductive Cu-doped ZnSe Film Deposited at Room Temperature Using Compound Sources Followed by Laser Annealing

The evaporation of ZnSe and Cu 2 Se powders was used to deposit a Cu-doped ZnSe film on a glass substrate at room temperature; this was followed by laser beam (λ= 355 nm) annealing. The film consisted of a zinc blende, ZnSe, crystalline single phase with the chemical composition (Zn 0.9 Cu 0.1 )Se. Over 70% optical transmittance was obtained in the green–red region. The film had a p-type polarity with a conductivity of 0.45 S cm -1 and a workfunction of 4.7 eV. P–n diodes fabricated with the film on an n-type ZnSe:Cl layer showed rectangular behavior with a small turn-on voltage of ∼1.5 V, which is plausibly explained by development of an impurity band.