High crystalline quality zinc-blende structure Zn(1−x)MgxSe epitaxial layers were grown on InP (001) substrates by molecular beam epitaxy. Their band gap energies were determined as a function of Mg concentration and a linear dependence was observed. The band gap of the Zn(1−x)MgxSe closely lattice matched to InP was found to be 3.59 eV at 77 K and the extrapolated value for zinc-blende MgSe was determined to be 3.74 eV. Quantum wells of Zn(1−x)CdxSe with Zn(1−x)MgxSe as the barrier layer were grown which exhibit near ultraviolet emission.
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Sohel et al. (2004) studied this question.
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