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The oxidation site of the polysilicon surface was studied using a scanning force/tunneling microscope in air. In the case of a polysilicon surface without an oxidation annealing process, the tunneling conductance at the grain boundary decreased faster than that far from the grain boundary. As a result, we confirmed that the area at the grain boundary was preferentially oxidized. On the other hand, in the case of a polysilicon surface with oxidation annealing process, we confirmed that the preferential oxidation of the grain boundary was suppressed.
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Sugawara et al. (1992) studied this question.
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