Novel Ferroelectric Polymer Memory Coupling Two Identical Thin‐Film Transistors

A novel ferroelectric memory cell is proposed by coupling two identical organic thin-film transistors. This cell takes advantage of the high coercive field of the organic polymer (E c > 50 MV m−1) to change the transistor function. The drive and memory thin-film transistor operation is achieved by applying a gate voltage, below or above E c of the ferroelectric material, respectively.