Generalized mechanism of the resistance switching in binary-oxide-based resistive random-access memories

We report that VO cohesion-isolation transition caused by carrier injection/removal is a generalized resistance switching mechanism of binary-oxide-based resistive random-access memories (ReRAMs). We propose universal guiding principles by which ReRAM with unipolar and bipolar operations can be designed by controlling electrode work functions. We found by first-principles calculations that structural phase transition with VO cohesion-isolation is the physical origin of the resistance switching mechanism of binary-oxide-based ReRAM. Based on our theory, we can propose a guiding principle toward bipolar switching ReRAM with stable high work function metal electrodes.