Raman-scattering assessment of Si+-implantation damage in InP

We studied the lattice damage caused by Si+ implantation into semi-insulating InP, with doses in the range of 1012 to 5×1014 cm−2, and the subsequent lattice recovery achieved by rapid thermal annealing (RTA), by means of Raman spectroscopy. With increasing implantation dose, an intensity reduction of the first- and second-order Raman peaks characteristic of crystalline InP is observed, together with the enhancement of disorder-activated modes. In samples implanted with doses higher than 1014 cm−2 the Raman spectra resembles that of amorphous InP, and the samples can be considered as fully amorphized. By RTA at 875 °C for 10 s, sample crystallinity is recovered, even in the case of those samples implanted with the highest dose. After annealing, the Raman spectra show no evidence of disorder-activated modes, and the intensity of the characteristic second-order peaks approaches the value found in unimplanted InP.