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Experimental and numerical study demonstrates enhanced 16.77% power conversion efficiency in Cu2CoSnS4 solar cells, suggesting strong potential for optimized thin-film photovoltaics.
In this work, Cu2CoSnS4 (CCTS) thin films were deposited on glass substrates by thermal evaporation and investigated for photovoltaic applications. The influence of substrate temperature, varied from 25 °C to 200 °C, on the structural, morphological, and optical properties of the films was experimentally studied using X-ray diffraction (XRD), scanning electron microscopy (SEM), and photoluminescence (PL) measurements. XRD analysis confirmed the formation of crystalline CCTS with a stannite structure and a preferential orientation along the (112) plane. SEM observations revealed rough and non-uniform surfaces accompanied by an increase in grain size with increasing substrate temperature. Room-temperature PL measurements indicated a band-gap energy of approximately 1.3 eV, suitable for photovoltaic applications, and confirmed the presence of secondary phases in the p-type stannite CCTS films. Despite the promising photovoltaic properties of CCTS, numerical studies on CCTS-based solar cells remain scarce in the literature. In this context, a numerical study of the CCTS-based solar structure grown on glass was also performed using SCAPS-1D, showing good agreement with experimental photovoltaic results and validating the simulation model. Replacing the glass substrate with silicon improved the device efficiency to 5.77%. Further optimization of the series and shunt resistances significantly enhanced the photovoltaic performance, achieving a power conversion efficiency of 16.77%, with FF = 52.94%, Voc = 0.89 V and Jsc = 35.19 mA/cm2.
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Guesmi et al. (2026) studied this question.
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