Design and Electrical Performance Simulation of a Novel 3D Silicon Detector with Interleaved Trench Electrodes

To address the limitations of traditional trench electrode silicon detectors, such as charge collection dead zones and non-uniform electric fields, this paper proposes a novel 3D silicon detector based on an interleaved trench electrode structure. By constructing interleaved N-type and P-type heavily doped trenches on a lightly doped N-type substrate, enhanced uniformity and depth profile optimization of the electric field distribution are achieved. Moreover, 3D numerical simulations based on TCAD demonstrate that the proposed structure provides a uniform, planar-like electric field distribution; reduces low-field regions; and enables fast carrier collection with a low full-depletion voltage. The results provide a theoretical basis and design reference for the development of novel 3D radiation detectors with low depletion voltages, fast charge collection, and favorable radiation response characteristics.