60Co γ-irradiation Effects on Electrical Characteristics of Monocrystalline Silicon Solar Cell

We report the gamma-ray (γ-ray) radiation-induced defects incurred by a monocrystalline Si solar cell. Capacitance–voltage (C–V) and dark current–voltage (I–V) characteristics were investigated from 1 kHz to 100 kHz at room temperature. The Co60 activity used for the γ-ray irradiation of a Si solar cell was 24864.37 atom Bq. The laboratory-made solar cell was irradiated at a 2π solid angle for 60 and 150 min. Results revealed that all output parameters, namely, short-circuit current, open-circuit voltage, fill factor, and relative efficiency, were degraded after irradiation. The dark I–V and non-ideality factor increased with increasing irradiation. C–V frequency measurements revealed the presence of the Compton scattering effect and radiation-induced defects. These defects were heavily occupied by electrons. Irradiation increased the density of defects and reduced the barrier height and overall cell efficiency.