We present self-consistent calculations of depletion- and accumulation-layer profiles for a range of carrier concentrations in n-type GaAs, at room temperature. The Hartree approximation is used, with the self-consistent potential fitted in the end to the analytic form introduced earlier by Baraff and Appelbaum [Phys. Rev. B 5, 475 (1972)]. We compare these results to profiles obtained from the Thomas-Fermi approximation.
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Ehlers et al. (1986) studied this question.
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