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Photodiodes have been produced by recoil implantation of Al and Ga into Si, using inert-gas-ion bombardment. Yields as large as 40 implanted Ga atoms per incoming Xe ion have been observed. The diodes were characterized by optical-window thicknesses from 0.14 to ∼1 μm.
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Christensen et al. (1976) studied this question.
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