Study of Chemically Amplified Resist Using an Electron Beam Recorder

We have been developing an electron beam recorder for next-generation optical disk mastering. Using a ZEP-520 resist that had high resolution, we fabricated read-only memory disks and obtained sufficient reproduction performance. But the recording velocity was 0.7 m/s to obtain sufficient jitter of the disk. We could not expect such low recording velocity to be used in mass production. Therefore we decided to use a chemically amplified resist, which had high sensitivity. To reduce the recording time, we adopted the resist to the optical disk mastering and investigated the process conditions. We examined the effect of development power and post-exposure banking (PEB) temperature on the jitter of the reproduced signals and obtained 6.4% jitter at a 2.5 m/s recording velocity.