Changes in the anomalous x-ray transmission intensity upon electron irradiation of dislocation-free silicon crystals have been measured. The irradiation at 20 K produced large changes in the transmission of the [220] reflection (i.e., 5%). Some annealing experiments were done. Attempts to understand the large changes suggest that some of the point defects agglomerate forming dislocation loops during irradiation.
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Fritsch et al. (1981) studied this question.
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