High-pressure oxidation (HPO) of germanium (Ge) for improving electrical properties of Ge/GeO 2 stacks was investigated. The capacitance–voltage ( C – V ) characteristics of metal/GeO 2 /Ge capacitors fabricated with HPO revealed improved electrical properties without any post-deposition annealing, and the interface states density ( D it ) was reduced to 2×10 11 eV -1 cm -2 near the midgap. Moreover, the refractive index of thermally oxidized GeO 2 was increased by HPO. It is also discussed from a thermodynamic viewpoint of the Ge/GeO 2 system that the GeO desorption from Ge/GeO 2 stacks could be efficiently suppressed by HPO.
No takes yet. Share an insight, caveat, or question.
Lee et al. (2009) studied this question.