Molecular beam epitaxy of YMnO3 on c-plane GaN

Epitaxial YMnO3 films were grown on (0001) GaN-on-sapphire templates using molecular beam epitaxy. The YMnO3 maintained the (0001) orientation with an in-plane YMnO3∕GaN epitaxial relationship of (0001)‖(0001); [11¯00]‖[112¯0]. The YMnO3 was ferroelectric at room temperature with a remanent polarization of ∼3.2μC∕cm2 and a saturation polarization of ∼12μC∕cm2. This heterostructure is a promising candidate for multifunctional structures that integrate ferroelectrics with GaN-based high-power and short-wavelength light-emitting devices.