Highly (110)-oriented and (100) nearly epitaxial 0.7PMN-0.3PT thin films were deposited on (1012) sapphire and (100) LaAlO3 substrates, respectively, using a dip-coating method. Optical waveguide characterization and electro-optic effect measurements of the film on sapphire substrate were demonstrated. Low propagation loss of 4.1 dB/cm and high quadratic electro-optic coefficient of 0.75×10−16 (m/V)2 were obtained at wavelength of 632.8 nm. Epitaxial PMN-PT thin films will be suitable for integrated optic devices.
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Lu et al. (1998) studied this question.
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