Giant anisotropic photogalvanic effect in a flexible AsSb monolayer with ultrahigh carrier mobility

), which is evidently larger than most of the reported 2D materials. In light of the nonequilibrium Green's function formalism, a linear photogalvanic effect (PGE) is observed along both the zigzag and armchair directions, suggesting that monolayer AsSb exhibits excellent photoresponse in a broad spectrum ranging from ultraviolet to infrared light, which is favorable for serving as a potential outstanding photovoltaic material. Our results highlight that these monolayer AsSb are promising candidates for future applications in electronics and optoelectronics.