Stress Dependence of Shallow Acceptor States in Semiconductors with Zincblende Symmetry

The spherical model for shallow acceptor states in cubic semiconductors is extended to consider the effect of uniaxial stress. The effective‐mass Hamiltonian including stress dependent terms is formulated using spherical tensor operators and dealt with by a variational procedure. By comparing the theoretical results with the donor‐acceptor recombination energy in stressed GaAs: Ge it is shown, that the stress dependence of the shallow acceptor is almost completely determined by the intrinsic properties of the host crystal, which are defined by the effective masses, the band deformation potentials, the spin–orbit splitting, and the dielectric constant.